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Pockels Cell Q Switch
Created with Pixso. SAW Device 46ns 7.5W Langasite 50KHz LGS Based Q Switch

SAW Device 46ns 7.5W Langasite 50KHz LGS Based Q Switch

Brand Name: CRYSTRO
Model Number: CR200820-05
MOQ: 1pc
Delivery Time: 4-5 weeks
Payment Terms: T/T, Western Union, MoneyGram, Paypal
Detail Information
Place of Origin:
CHINA
Certification:
SGS/ROHS
Maximum Operating Frequency:
50KHz
Material:
Langasite
Maximum Output Power:
7.5W
Pulse Width:
46ns
Energy Output -40℃:
155mJ
Energy Output +50℃:
163mJ
Supply Ability:
3000pcs/month
Highlight:

50KHz LGS Based Q Switch

,

7.5W LGS Based Q Switch

,

46ns Pockels Cell Q Switch

Product Description

LGS Crystal For LGS Q Switch BAW device SAW device

 

LGS Series Electro-optic (EO) Q-switch Pockels Cell

 

A new kind of EO Q-switch is designed by use of a La3Ga5SiQ14 (LGS) crystal. LGS crystal is one kind of optically active NLO material with very high damage threshold (about 9 times as that of LN), excellent E-O coefficient, high temperature stability (better than quartz), the Q-switch is based on the consideration that the total rotation angle of the polarization plane is zero, whereas the polarized wave propagates through the Pockels cell back and forth, with the polarization plane gyration and electro-optic effect existing simultaneously, therefore it is widely used in E-O components such as E-O modulator, Q-switch, etc.

 

 

Features:

  • LGS -based Q-switch (Pockels cell);
  • For wavelengths up to 3.2μm;
  • Transmitted Wave Front Distortion: < l/4;
  • Damage threshold: >900MW/cm2 (@1064nm, 10ns, typical, not guaranteed);
  • LGS available for medium power systems, partially take place of DKDP and LiNbO3 series Q-switches.

 

LGS-Q-Switch Properties:

 

Maximum operating frequency 50KHz
Maximum output power 7.5W
Pulse width 46ns
Energy output -40 155mJ
Energy output +50 163mJ
Room temperature energy output 167mJ
Electro-optic conversion efficiency 1.26%
Good price  online

Products Details

Created with Pixso. Home Created with Pixso. Products Created with Pixso.
Pockels Cell Q Switch
Created with Pixso. SAW Device 46ns 7.5W Langasite 50KHz LGS Based Q Switch

SAW Device 46ns 7.5W Langasite 50KHz LGS Based Q Switch

Brand Name: CRYSTRO
Model Number: CR200820-05
MOQ: 1pc
Payment Terms: T/T, Western Union, MoneyGram, Paypal
Detail Information
Place of Origin:
CHINA
Brand Name:
CRYSTRO
Certification:
SGS/ROHS
Model Number:
CR200820-05
Maximum Operating Frequency:
50KHz
Material:
Langasite
Maximum Output Power:
7.5W
Pulse Width:
46ns
Energy Output -40℃:
155mJ
Energy Output +50℃:
163mJ
Minimum Order Quantity:
1pc
Delivery Time:
4-5 weeks
Payment Terms:
T/T, Western Union, MoneyGram, Paypal
Supply Ability:
3000pcs/month
Highlight:

50KHz LGS Based Q Switch

,

7.5W LGS Based Q Switch

,

46ns Pockels Cell Q Switch

Product Description

LGS Crystal For LGS Q Switch BAW device SAW device

 

LGS Series Electro-optic (EO) Q-switch Pockels Cell

 

A new kind of EO Q-switch is designed by use of a La3Ga5SiQ14 (LGS) crystal. LGS crystal is one kind of optically active NLO material with very high damage threshold (about 9 times as that of LN), excellent E-O coefficient, high temperature stability (better than quartz), the Q-switch is based on the consideration that the total rotation angle of the polarization plane is zero, whereas the polarized wave propagates through the Pockels cell back and forth, with the polarization plane gyration and electro-optic effect existing simultaneously, therefore it is widely used in E-O components such as E-O modulator, Q-switch, etc.

 

 

Features:

  • LGS -based Q-switch (Pockels cell);
  • For wavelengths up to 3.2μm;
  • Transmitted Wave Front Distortion: < l/4;
  • Damage threshold: >900MW/cm2 (@1064nm, 10ns, typical, not guaranteed);
  • LGS available for medium power systems, partially take place of DKDP and LiNbO3 series Q-switches.

 

LGS-Q-Switch Properties:

 

Maximum operating frequency 50KHz
Maximum output power 7.5W
Pulse width 46ns
Energy output -40 155mJ
Energy output +50 163mJ
Room temperature energy output 167mJ
Electro-optic conversion efficiency 1.26%